100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
![A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile - Deng - 2023 - IET Power Electronics - Wiley Online Library A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile - Deng - 2023 - IET Power Electronics - Wiley Online Library](https://ietresearch.onlinelibrary.wiley.com/cms/asset/42e3a42d-6905-4e1a-b804-57693bd7e336/pel212439-fig-0001-m.jpg)
A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile - Deng - 2023 - IET Power Electronics - Wiley Online Library
A trench bidirectional power n-channel MOSFET showing the additional... | Download Scientific Diagram
![Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb](https://techweb.rohm.com/upload/2017/12/SiC_15_graf01.jpg)